Single crystal aluminum nitride substrates
single crystal aluminum substrates details
Available in research and production qualities
  • epi-ready surfaces (Al-polar or N-polar)
  • 1 and 2 inches in diameter
  • 300 μm thick wafers up to 50 % transmission down to 230 nm wavelength
  • orientation
    (0001) standard, semi-polar and non-polar on request
  • dislocation density < 105 cm-2
We we are prepared to collaborate for a close collaboration and offer the additional service of supporting the whole epitaxy process by reclaiming or replacing wafers with different specifications.
Please contact us with us for more detailed specifications or to get a quotation.
transparency of wafers
UV transparency
low absorption coefficient up to the band edge
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Polished Surface c-plane
Polished surface c-plane (0001)
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ultrapure powder
High-purity recrystallized aluminum nitride powder particle/crystallite size 0.1 - 1mm
 
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Tungsten & molybdenum
 
Crucibles, discs, tubes and more
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services for wafering
 
State of the art wafering and polishing services of high semiconductor materials and industrial crystals
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